EFFECTIVE TRANSFER OF EXCITATION FROM THE EMITTER TO THE ACTIVE REGION DURING PHOTOLUMINESCENCE OF INGAASP INP DOUBLE HETEROSTRUCTURES

被引:0
作者
GARBUZOV, DZ
AGAFONOV, VG
AGAEV, VV
LANTRATOV, VM
CHUDINOV, AV
机构
来源
SOVIET PHYSICS SEMICONDUCTORS-USSR | 1983年 / 17卷 / 12期
关键词
D O I
暂无
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
引用
收藏
页码:1385 / 1388
页数:4
相关论文
共 12 条
[1]  
AGAEV VV, 1981, SOV PHYS SEMICOND+, V15, P1326
[2]  
ALFEROV ZI, 1976, SOV PHYS SEMICOND+, V10, P888
[3]  
Bert N. A., 1980, Avtometriya, P11
[4]   VARIATION OF MINORITY-CARRIER DIFFUSION LENGTH WITH CARRIER CONCENTRATION IN GAAS LIQUID-PHASE EPITAXIAL LAYERS [J].
CASEY, HC ;
MILLER, BI ;
PINKAS, E .
JOURNAL OF APPLIED PHYSICS, 1973, 44 (03) :1281-1287
[5]   EVIDENCE FOR LOW SURFACE RECOMBINATION VELOCITY ON N-TYPE INP [J].
CASEY, HC ;
BUEHLER, E .
APPLIED PHYSICS LETTERS, 1977, 30 (05) :247-249
[6]  
GABRUZOV DZ, 1982, SOV PHYS SEMICOND, V16, P986
[7]  
GARBUZOV DZ, 1982, SOV PHYS SEMICOND+, V16, P540
[8]  
HOVEL HJ, 1975, SEMICONDUCTORS SEMIM, V11, P37
[9]   SOME OPTICAL-PROPERTIES OF ALXGA1-XAS ALLOY SYSTEM [J].
MONEMAR, B ;
SHIH, KK ;
PETTIT, GD .
JOURNAL OF APPLIED PHYSICS, 1976, 47 (06) :2604-2613
[10]  
TULASHVILI EV, 1982, SOV PHYS SEMICOND+, V16, P1031