CRYSTALLIZATION OF GE AND SI IN METAL-FILMS .2.

被引：41

作者：

SIGURD, D ^{[1
]}

OTTAVIAN.G ^{[1
]}

ARNAL, HJ ^{[1
]}

MAYER, JW ^{[1
]}

机构：

[1] CALTECH,PASADENA,CA 91109

来源：

JOURNAL OF APPLIED PHYSICS | 1974年 / 45卷 / 04期

关键词：

D O I：

10.1063/1.1663484

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1740 / 1745

页数：6

共 20 条

[1]

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[3]

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[4] LOW-TEMPERATURE MIGRATION OF SILICON THROUGH METAL FILMS IMPORTANCE OF SILICON-METAL INTERFACE [J].

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[5] FORMATION OF SILICON OXIDE OVER GOLD LAYERS ON SILICON SUBSTRATES [J].

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JOURNAL OF APPLIED PHYSICS, 1972, 43 (09) :3643-&

[6] METALLURGICAL PROPERTIES AND ELECTRICAL CHARACTERISTICS OF PALLADIUM SILICIDE-SILICON CONTACTS [J].

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[7] CRYSTALLIZATION AND DECOMPOSITION OF AMORPHOUS ALUMINUM-GERMANIUM FILMS [J].

KOSTER, U .

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[8] SOLID-PHASE EPITAXIAL-GROWTH OF GE LAYERS [J].

MARRELLO, V ;

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NICOLET, MA .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1972, 13 (02) :531-&

[9] DIFFUSIVITY AND SOLUBILITY OF SI IN AL METALLIZATION OF INTEGRATED CIRCUITS [J].

MCCALDIN, JO ;

SANKUR, H .

APPLIED PHYSICS LETTERS, 1971, 19 (12) :524-&

[10] CRYSTALLIZATION OF GE AND SI IN METAL-FILMS .1. [J].

OTTAVIAN.G ;

SIGURD, D ;

MARRELLO, V ;

MAYER, JW ;

MCCALDIN, JO .

JOURNAL OF APPLIED PHYSICS, 1974, 45 (04) :1730-1739

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