HYDROGEN TREATMENT EFFECT ON SHALLOW AND DEEP CENTERS IN GASB

被引：25

作者：

POLYAKOV, AY

PEARTON, SJ

WILSON, RG

RAICHOUDHURY, P

HILLARD, RJ

BAO, XJ

STAM, M

MILNES, AG

SCHLESINGER, TE

LOPATA, J

机构：

[1] AT&T BELL LABS,MURRAY HILL,NJ 07974

[2] HUGHES RES LABS,MALIBU,CA 90265

[3] SOLID STATE MEASUREMENTS,PITTSBURGH,PA 15275

来源：

APPLIED PHYSICS LETTERS | 1992年 / 60卷 / 11期

关键词：

D O I：

10.1063/1.107329

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

It is shown by spreading resistance and capacitance-voltage measurements that atomic hydrogen passivates shallow acceptors and donors in GaSb. Deep level passivation by hydrogen also occurs, as revealed by deep level transient spectroscopy measurements on Schottky diode structures. Effective diffusion coefficients for hydrogen were determined for both n+ and p+ GaSb; in the former case the diffusion is thermally activated with the relationship D(H) = 3.4 X 10(-5)e-0.55 eV/kT, whereas in p+ material D(H)= 1.5 X 10(-6)e-0.45 eV/kT over the temperature range 100-250-degrees-C. Reactivation of passivated shallow and deep levels occurs for temperatures of 250-300-degrees-C.

引用

页码：1318 / 1320

页数：3

共 15 条

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