A DEPLETION MODE MOSFET MODEL FOR CIRCUIT SIMULATION

被引：7

作者：

DIVEKAR, DA ^{[1
]}

DOWELL, RI ^{[1
]}

机构：

[1] HEWLETT PACKARD CORP,HP DESIGN AIDS,CUPERTINO,CA 95014

来源：

关键词：

D O I：

10.1109/TCAD.1984.1270060

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

引用

页码：80 / 87

页数：8

共 8 条

[1]

CHUANG PT, 1975, ADV MOSFET MODELING

[2]

CRAWFORD RH, 1967, MOSFET CIRCUIT DESIG, P66

[3] ANALYSIS AND CHARACTERIZATION OF THE DEPLETION-MODE IGFET [J].

ELMANSY, YA .

[4] CONDUCTANCE OF MOS TRANSISTORS IN SATURATION [J].

FROHMANB.D ;

GROVE, AS .

[5]

KHALILY E, 1981, HEWLETT-PACKARD J, V32, P16

[6]

KNEPPER R, 1978, ISSCC, P16

[7]

SCHEFFER LK, 1981, HEWLETT-PACKARD J, V32, P12

[8] CHARGE-ORIENTED MODEL FOR MOS-TRANSISTOR CAPACITANCES [J].

WARD, DE ;

DUTTON, RW .