NOISE CHARACTERISTICS OF A SI/SIGE RESONANT TUNNELING DIODE

被引：2

作者：

OKADA, Y ^{[1
]}

XU, J ^{[1
]}

LIU, HC ^{[1
]}

LANDHEER, D ^{[1
]}

BUCHANAN, M ^{[1
]}

HOUGHTON, DC ^{[1
]}

机构：

[1] NATL RES COUNCIL CANADA,MICROSTRUCTURAL SCI LAB,OTTAWA K1A 0R6,ONTARIO,CANADA

来源：

SOLID-STATE ELECTRONICS | 1989年 / 32卷 / 09期

关键词：

D O I：

10.1016/0038-1101(89)90014-2

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：797 / 800

页数：4

共 6 条

[1] RESONANT TUNNELING IN SEMICONDUCTOR DOUBLE BARRIERS [J].

CHANG, LL ;

ESAKI, L ;

TSU, R .

APPLIED PHYSICS LETTERS, 1974, 24 (12) :593-595

[2] RESONANT TUNNELING IN SI/SI1-XGEX DOUBLE-BARRIER STRUCTURES [J].

LIU, HC ;

LANDHEER, D ;

BUCHANAN, M ;

HOUGHTON, DC .

APPLIED PHYSICS LETTERS, 1988, 52 (21) :1809-1811

[3] OBSERVATION OF RESONANT TUNNELING THROUGH A COMPOSITIONALLY GRADED PARABOLIC QUANTUM-WELL [J].

SEN, S ;

CAPASSO, F ;

GOSSARD, AC ;

SPAH, RA ;

HUTCHINSON, AL ;

CHU, SNG .

APPLIED PHYSICS LETTERS, 1987, 51 (18) :1428-1430

[4] RESONANT TUNNELING OSCILLATIONS IN A GAAS-ALXGA1-XAS HETEROSTRUCTURE AT ROOM-TEMPERATURE [J].

SHEWCHUK, TJ ;

CHAPIN, PC ;

COLEMAN, PD ;

KOPP, W ;

FISCHER, R ;

MORKOC, H .

APPLIED PHYSICS LETTERS, 1985, 46 (05) :508-510

[5] RESONANT TUNNELING THROUGH QUANTUM WELLS AT FREQUENCIES UP TO 2.5 THZ [J].

SOLLNER, TCLG ;

GOODHUE, WD ;

TANNENWALD, PE ;

PARKER, CD ;

PECK, DD .

APPLIED PHYSICS LETTERS, 1983, 43 (06) :588-590

[6]

VANDERZIEL A, 1986, NOISE SOLID STATE DE, pCH8

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