CHEMICAL VAPOR-DEPOSITION OF EPITAXIAL SILICON FROM SILANE AT LOW-TEMPERATURES .2. PLASMA ENHANCED DEPOSITION

被引：23

作者：

COMFORT, JH ^{[1
]}

REIF, R ^{[1
]}

机构：

[1] MIT,DEPT ELECT ENGN & COMP SCI,CAMBRIDGE,MA 02139

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1989年 / 136卷 / 08期

关键词：

D O I：

10.1149/1.2097381

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：2398 / 2405

页数：8

共 20 条

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[3] SILICON SURFACE CLEANING BY LOW-DOSE ARGON-ION BOMBARDMENT FOR LOW-TEMPERATURE (750-DEGREES-C) EPITAXIAL SILICON DEPOSITION .1. PROCESS CONSIDERATIONS [J].

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[4] INSITU ARSENIC DOPING OF EPITAXIAL SILICON AT 800-DEGREES-C BY PLASMA ENHANCED CHEMICAL VAPOR-DEPOSITION [J].

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[5]

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[6] LOW-TEMPERATURE SILICON EPITAXY USING LOW-PRESSURE CHEMICAL VAPOR-DEPOSITION WITH AND WITHOUT PLASMA ENHANCEMENT [J].

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[7] SILICON EPITAXY AT 650-800-DEGREES-C USING LOW-PRESSURE CHEMICAL VAPOR-DEPOSITION BOTH WITH AND WITHOUT PLASMA ENHANCEMENT [J].

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[8]

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[9] SILICON SURFACE CLEANING BY LOW-DOSE ARGON-ION BOMBARDMENT FOR LOW-TEMPERATURE (750-DEGREES-C) EPITAXIAL DEPOSITION .2. EPITAXIAL QUALITY [J].

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[10] THE ROLE OF LOW-ENERGY ION-BOMBARDMENT DURING THE GROWTH OF EPITAXIAL TIN(100) FILMS BY REACTIVE MAGNETRON SPUTTERING - DEFECT FORMATION AND ANNIHILATION [J].

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JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1987, 5 (04) :2162-2164

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