DRY ETCH DAMAGE IN INN, INGAN, AND INALN

被引：76

作者：

PEARTON, SJ ^{[1
]}

LEE, JW ^{[1
]}

MACKENZIE, JD ^{[1
]}

ABERNATHY, CR ^{[1
]}

SHUL, RJ ^{[1
]}

机构：

[1] SANDIA NATL LABS,ALBUQUERQUE,NM 87185

来源：

APPLIED PHYSICS LETTERS | 1995年 / 67卷 / 16期

关键词：

D O I：

10.1063/1.114334

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Changes in conductivity of InN, In0.5Ga0.5N, and In0.5Al0.5N layers exposed to Ar plasmas under both electron cyclotron resonance and reactive ion etching conditions have been measured as a function of rf power, pressure, and exposure time. The combination of high microwave and high rf powers produces large increases (10-10(4) times) in sheet resistance of the nitrides, but conditions more typical of real etching processes (rf power <150 W) do not change the electrical properties. The nitrides are more resistant to damage introduction than other III-V semiconductors. The removal of damage-related traps occurs with an activation energy of similar to 2.7 eV. (C) 1995 American Institute of Physics.

引用

页码：2329 / 2331

页数：3

共 15 条

[1] ELECTRICAL AND STRUCTURAL-PROPERTIES OF INXGA1-XN ON GAAS [J].