RAPID THERMAL ANNEALING OF SI+ IMPLANTED GAAS IN THE PRESENCE OF ARSENIC PRESSURE BY GAAS POWDER

被引：20
作者：
HIRAMOTO, T
SAITO, T
IKOMA, T
机构：
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1985年 / 24卷 / 03期
关键词：
D O I：
10.1143/JJAP.24.L193
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：L193 / L195
页数：3
相关论文
共 7 条
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