ELECTRON-IRRADIATION-INDUCED DIVACANCY IN LIGHTLY DOPED SILICON

被引：242

作者：

EVWARAYE, AO

SUN, E

机构：

[1] GE, SCHENECTADY, NY 12301 USA

[2] GEN ELECTRIC, DEPT SEMICONDUCTOR PROD, AUBURN, NY 13201 USA

来源：

JOURNAL OF APPLIED PHYSICS | 1976年 / 47卷 / 09期

关键词：

D O I：

10.1063/1.323260

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3776 / 3780

页数：5

共 27 条

[1] PARAMAGNETIC RESONANCE IN ELECTRON IRRADIATED SILICON [J].

BEMSKI, G .

JOURNAL OF APPLIED PHYSICS, 1959, 30 (08) :1195-1198

[2] EFFECT OF ELECTRON ENERGY ON DEFECT INTRODUCTION IN SILICON [J].

CARTER, JR .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1966, 27 (6-7) :913-&

[3] 1.8- 3.3- AND 3.9-MU BANDS IN IRRADIATED SILICON - CORRELATIONS WITH DIVACANCY [J].

CHENG, LJ ;

CORELLI, JC ;

CORBETT, JW ;

WATKINS, GD .

PHYSICAL REVIEW, 1966, 152 (02) :761-+

[4] PHOTOCONDUCTIVITY STUDIES OF DEFECTS IN P-TYPE SILICON - BORON INTERSTITIAL AND ALUMINUM INTERSTITIAL DEFECTS [J].

CHERKI, M ;

KALMA, AH .

PHYSICAL REVIEW B-SOLID STATE, 1970, 1 (02) :647-&

[5]

Corbett J. W., 1966, ELECT RAD DAMAGE SEM, P39

[6] PRODUCTION OF DIVACANCIES AND VACANCIES BY ELECTRON IRRADIATION OF SILICON [J].

CORBETT, JW ;

WATKINS, GD .

PHYSICAL REVIEW, 1965, 138 (2A) :A555-&

[7] ELECTRICAL-PROPERTIES OF PLATINUM IN SILICON AS DETERMINED BY DEEP-LEVEL TRANSIENT SPECTROSCOPY [J].

EVWARAYE, AO ;

SUN, E .

JOURNAL OF APPLIED PHYSICS, 1976, 47 (07) :3172-3176

[8] INFRARED ABSORPTION AND PHOTOCONDUCTIVITY IN IRRADIATED SILICON [J].

FAN, HY ;

RAMDAS, AK .

JOURNAL OF APPLIED PHYSICS, 1959, 30 (08) :1127-1134

[9] RECOMBINATION IN GAMMA-IRRADIATED SILICON [J].

GLAENZER, RH ;

WOLF, CJ .

JOURNAL OF APPLIED PHYSICS, 1965, 36 (07) :2197-&

[10] ELECTRON BOMBARDMENT OF SILICON [J].

HILL, DE .

PHYSICAL REVIEW, 1959, 114 (06) :1414-1420

← 1 2 3 →