CARRIER RECOMBINATION AND LIFETIME IN HIGHLY DOPED SILICON

被引：157
作者：
FOSSUM, JG
MERTENS, RP
LEE, DS
NIJS, JF
机构：
来源：
SOLID-STATE ELECTRONICS | 1983年 / 26卷 / 06期
关键词：
D O I：
10.1016/0038-1101(83)90173-9
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：569 / 576
页数：8
相关论文
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