SURFACE MODIFICATION OF CAF2 IN ATOMIC LAYER SCALE BY ELECTRON-BEAM EXPOSURE

被引：6

作者：

HWANG, SM

IZUMI, A

TSUTSUI, K

FURUKAWA, S

机构：

[1] Department of Applied Electronics, Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, Midori-ku, Yokohama, 227

来源：

APPLIED SURFACE SCIENCE | 1994年 / 82-3卷 / 1-4期

关键词：

Adsorption - Electron beams - Film growth - Fluorine compounds - Mathematical models - Molecular beam epitaxy - Rutherford backscattering spectroscopy - Substrates - Surface treatment - Thermal effects - X ray photoelectron spectroscopy;

D O I：

10.1016/0169-4332(94)90268-2

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Surface modification of CaF2/Si(111) was studied for the purpose of 1 ML adsorption of group-V atoms on a fluoride surface which is applicable to heteroepitaxy of III-V compound semiconductors on CaF2. By using Rutherford backscattering (RBS) and X-ray photoelectron spectroscopy (XPS), it was found that 1 ML of As and P were successfully adsorbed on a CaF2 surface, and that a 1 ML self-limiting adsorption of As for the electron beam exposure was realized. Also, we propose a model for the adsorption conditions depending on the substrate temperature during surface modification.

引用

页码：523 / 527

页数：5

共 6 条

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