NUMERICAL-SIMULATION OF A STEADY-STATE ELECTRON SHOCK-WAVE IN A SUBMICROMETER SEMICONDUCTOR-DEVICE

被引:120
作者
GARDNER, CL
机构
[1] Department of Computer Science Duke University, Durham
基金
美国国家科学基金会;
关键词
D O I
10.1109/16.69922
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The hydrodynamic model consists of a set of nonlinear conservation laws for particle number, momentum, and energy, coupled to Poisson's equation for the electric potential. The nonlinear conservation laws are just the Euler equations of gas dynamics for a gas of charged particles in an electric field, with the addition of a heat conduction term. Thus the hydrodynamic model PDE's have hyperbolic, parabolic, and elliptic modes. The nonlinear hyperbolic modes support shock waves. The first numerical simulations of a steady-state electron shock wave in a semiconductor device are presented, using the hydrodynamic model. For the ballistic diode (which models the channel of a MOSFET), the shock wave is fully developed in Si (with 1-V bias) at 300 K for a 0.1-mu-m channel and at 77 K for a 1.0-mu-m channel.
引用
收藏
页码:392 / 398
页数:7
相关论文
共 16 条
[1]   AN INVESTIGATION OF STEADY-STATE VELOCITY OVERSHOOT IN SILICON [J].
BACCARANI, G ;
WORDEMAN, MR .
SOLID-STATE ELECTRONICS, 1985, 28 (04) :407-416
[2]   GLOBAL APPROXIMATE NEWTON METHODS [J].
BANK, RE ;
ROSE, DJ .
NUMERISCHE MATHEMATIK, 1981, 37 (02) :279-295
[3]  
FATEMI E, IN PRESS IEEE T COMP
[4]  
FISCHETTI MV, IN PRESS IEEE T ELEC
[5]   NUMERICAL-METHODS FOR THE HYDRODYNAMIC DEVICE MODEL - SUBSONIC FLOW [J].
GARDNER, CL ;
JEROME, JW ;
ROSE, DJ .
IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS, 1989, 8 (05) :501-507
[6]  
GARDNER CL, 1988, JUL VLSI MIN S SIAM
[7]  
GARDNER CL, IN PRESS NONLINEAR H
[8]   A GENERALIZED RIEMANN PROBLEM FOR QUASI-ONE-DIMENSIONAL GAS-FLOWS [J].
GLIMM, J ;
MARSHALL, G ;
PLOHR, B .
ADVANCES IN APPLIED MATHEMATICS, 1984, 5 (01) :1-30
[9]  
GNUDI A, IN PRESS INVESTIGATI
[10]   A HYBRID CENTRAL DIFFERENCE SCHEME FOR SOLID-STATE DEVICE SIMULATION [J].
KRESKOVSKY, JP .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (05) :1128-1133