DIFFUSION OF IMPURITIES FROM IMPLANTED SILICON LAYERS BY RAPID THERMAL ANNEALING

被引：6
作者：
ALEKSANDROV, OV
KOZLOVSKII, VV
POPOV, VV
SAMORUKOV, BE
机构：
[1] Leningrad Polytechnical Inst, Russia
来源：
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1988年 / 110卷 / 02期
关键词：
D O I：
10.1002/pssa.2211100243
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
12
引用
收藏
页码：K61 / K65
页数：5
相关论文
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