PHOTOLUMINESCENCE AND INFRARED-SPECTROSCOPY OF ACCEPTORS IN GAAS

被引：22

作者：

BISHOP, SG

SHANABROOK, BV

MOORE, WJ

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1984年 / 56卷 / 06期

关键词：

D O I：

10.1063/1.334186

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1785 / 1790

页数：6

共 10 条

[1]

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APPLIED PHYSICS LETTERS, 1982, 40 (10) :898-901

[3] RESIDUAL DOUBLE ACCEPTORS IN BULK GAAS [J].

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APPLIED PHYSICS LETTERS, 1983, 42 (03) :274-276

[4]

MOORE WJ, 1984, UNPUB SEMIINSULATING

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TA, LB ;

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THOMAS, RN .

APPLIED PHYSICS LETTERS, 1982, 41 (11) :1091-1093

[6]

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[7] PHOTO-LUMINESCENCE IDENTIFICATION OF APPROXIMATELY 77-MEV DEEP ACCEPTOR IN GAAS [J].

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[8] EVIDENCE OF INTRINSIC DOUBLE ACCEPTOR IN GAAS [J].

YU, PW ;

MITCHEL, WC ;

MIER, MG ;

LI, SS ;

WANG, WL .

APPLIED PHYSICS LETTERS, 1982, 41 (06) :532-534

[9] PHOTO-LUMINESCENCE EXCITATION OF THE 1.441-EV CATION ANTISITE EMISSION IN P-TYPE GAAS [J].

YU, PW .

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[10]

YU PW, 1982, I PHYS C SER, V63, P209

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