Molecular Dynamics Modeling of Thermal Conductivity of Silicon/Germanium Nanowires

被引：0

作者：

Kishkar, A. S. ^{[1
]}

Kuryliuk, V. V. ^{[1
]}

机构：

[1] Taras Shevchenko Natl Univ Kyiv, Dept Phys, Volodymyrska Str 64-13, UA-01601 Kiev, Ukraine

来源：

PHYSICS AND CHEMISTRY OF SOLID STATE | 2018年 / 19卷 / 03期

关键词：

thermal conductivity; nanowire; silicon; germanium; molecular dynamics;

D O I：

10.15330/pcss.19.3.222-225

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The thermal conductivity of silicon/germanium nanowires with different geometry and composition has been studied by using the nonequilibrium molecular dynamics method. The thermal conductivity of the Si1-xGex nanowires is shown to firstly decrease, reaches a minimum at x = 0.4 and then to increase, as the germanium content x grows. It was found that in the tubular Si nanowires the thermal conductivity decreases monotonously with increasing radius of the cylindrical void. The phonon spectra were calculated and the mechanisms of phonon scattering in the investigated nanowires were analyzed.

引用

页码：222 / 225

页数：4

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