VAPOR-PHASE GROWTH OF ARSENIC CHALCOGENIDE CRYSTALS AND THEIR CHARACTERIZATION

被引:18
作者
GHOSH, B
KOTHIYAL, GP
机构
关键词
D O I
10.1016/0146-3535(83)90015-1
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
引用
收藏
页码:393 / 413
页数:21
相关论文
共 75 条
[1]   DARK AND PHOTOGENERATED AC CONDUCTIVITY IN AS2S3 SINGLE-CRYSTALS [J].
ABKOWITZ, M ;
BLOSSEY, DF ;
LAKATOS, AI .
PHYSICAL REVIEW B, 1975, 12 (08) :3400-3407
[2]  
ADLER D, 1978, TEV MOD PHYS, V50, P203
[3]   STUDIES OF THE FINE-STRUCTURE OF THE DIRECT GAP OF AS2SE3 SINGLE-CRYSTALS BY ELECTROREFLECTANCE [J].
ALTHAUS, HL ;
WEISER, G .
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1980, 99 (02) :537-545
[4]   ELECTROABSORPTION ON THE INDIRECT GAP OF AS2SE3 [J].
ALTHAUS, HL ;
WEISER, G .
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1980, 99 (01) :277-284
[5]  
BATTAT D, 1976, PREPARATION PROPERTI
[6]   EFFECT OF PRESSURE ON OPTICAL-PROPERTIES OF CRYSTALLINE AS2S3 [J].
BESSON, JM ;
CERNOGORA, J ;
ZALLEN, R .
PHYSICAL REVIEW B, 1980, 22 (08) :3866-3876
[7]   EFFECTS OF IMPURITIES UPON PHOTO-LUMINESCENCE AND OPTICALLY INDUCED PARAMAGNETIC STATES IN CHALCOGENIDE GLASSES [J].
BISHOP, SG ;
STROM, U ;
FRIEBELE, EJ ;
TAYLOR, PC .
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1979, 32 (1-3) :359-372
[8]  
BLOSSEY DF, 1974, PHYS REV B, V9, P4306, DOI 10.1103/PhysRevB.9.4306
[9]  
Bohac P., 1974, Kristall und Technik, V9, P237, DOI 10.1002/crat.19740090307
[10]   SYNTHETIC CRYSTALS OF ARSENIC TRISULPHIDE [J].
BOWLT, C ;
GHOSH, BN .
BRITISH JOURNAL OF APPLIED PHYSICS, 1965, 16 (11) :1762-&