LOW-ENERGY EXCITATION OF PHOTO-LUMINESCENCE IN A-SI-H - TEMPERATURE AND INTENSITY EFFECTS

被引：18

作者：

BHAT, PK

SEARLE, TM

AUSTIN, IG

GIBSON, RA

ALLISON, J

机构：

[1] UNIV DUNDEE,CARNEGIE LAB PHYS,DUNDEE DD1 4HN,SCOTLAND

[2] UNIV SHEFFIELD,DEPT ELECTR ENGN,SHEFFIELD S1 4DT,ENGLAND

来源：

SOLID STATE COMMUNICATIONS | 1983年 / 45卷 / 06期

关键词：

D O I：

10.1016/0038-1098(83)90157-6

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：481 / 485

页数：5

共 15 条

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[2] THERMALIZATION GAP EXCITATION PHOTO-LUMINESCENCE AND OPTICAL-ABSORPTION IN AMORPHOUS SILICON-HYDROGEN ALLOYS [J].

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[3] ON THE ROLE OF THE DANGLING BOND AS A RADIATIVE CENTER IN A-SI-H [J].

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[5] DIRECT MEASUREMENT OF GAP-STATE ABSORPTION IN HYDROGENATED AMORPHOUS-SILICON BY PHOTOTHERMAL DEFLECTION SPECTROSCOPY [J].

JACKSON, WB ;

AMER, NM .

PHYSICAL REVIEW B, 1982, 25 (08) :5559-5562

[6] TIME RESOLVED PHOTO-LUMINESCENCE NEAR THE BAND-GAP IN AMORPHOUS SILICON [J].

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KINMOND, S .

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[7]

Loveland R. J., 1973, Journal of Non-Crystalline Solids, V13, P55, DOI 10.1016/0022-3093(73)90035-5

[8] DERIVATION OF THE LOW-ENERGY OPTICAL-ABSORPTION SPECTRA OF A-SI-H FROM PHOTOCONDUCTIVITY [J].

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PAUL, W .

PHYSICAL REVIEW B, 1980, 22 (04) :1918-1925

[9]

NASHASHIBI TS, 1977, 7TH P INT C AM LIQ S, P392

[10] OPTICAL-ABSORPTION BY GAP STATES IN HYDROGENATED AMORPHOUS-SILICON [J].

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JOURNAL OF NON-CRYSTALLINE SOLIDS, 1980, 35-6 (JAN-) :459-462

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