IMPROVED FORM OF OSCILLATING ELECTRON ELECTROSTATIC ION-SOURCE FOR ION ETCHING

被引：10

作者：

GHANDER, AM ^{[1
]}

FITCH, RK ^{[1
]}

机构：

[1] UNIV ASTON,DEPT PHYS,GOSTA GREEN,BIRMINGHAM B4 7ET,ENGLAND

来源：

关键词：

D O I：

10.1016/0042-207X(74)90014-1

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：483 / 487

页数：5

共 9 条

[1]

BARBER DJ, 1970, J MATER SCI, V5, P1, DOI 10.1007/BF02427178

[2]

FRANKS J, Patent No. 5462772

[3]

GHANDER AM, IN PRESS

[4]

HOLLAND L, 1972, ELECTRONIC COMPONENT, V5, P493

[5] CHARGED-PARTICLE OSCILLATOR [J].

MCILRAIT.AH .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1972, 9 (01) :209-&

[6] ION-BEAM POLISHING OF GLASS [J].

PEARSON, AD ;

HARSELL, WB .

[7] SENSITIVE TIME-OF-FLIGHT MOLECULAR-BEAM DETECTOR [J].

PEGGS, GN ;

MCILRAIT.AH .

JOURNAL OF PHYSICS E-SCIENTIFIC INSTRUMENTS, 1973, 6 (11) :1137-1139

[8] MODES OF OPERATION OF AN ELECTROSTATIC ION GUN [J].

RUSHTON, GJ ;

OSHEA, KR ;

FITCH, RK .

[9]

YOSHIDA K, 1973, J ELECTRON MICROSC, V22, P5