HIGH-SPEED ENHANCEMENT MODE INP METAL-INSULATOR-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS EXHIBITING VERY HIGH TRANSCONDUCTANCE

被引：11

作者：

ANTREASYAN, A

GARBINSKI, PA

MATTERA, VD

TEMKIN, H

机构：

来源：

APPLIED PHYSICS LETTERS | 1986年 / 49卷 / 09期

关键词：

D O I：

10.1063/1.97105

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：513 / 515

页数：3

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