RAMAN-SCATTERING FROM ION-IMPLANTED SILICON

被引：53
|
作者：
JAIN, KP [1 ]
SHUKLA, AK [1 ]
ASHOKAN, R [1 ]
ABBI, SC [1 ]
BALKANSKI, M [1 ]
机构：
[1] UNIV PARIS 06,PHYS SOLIDES LAB,F-75230 PARIS 05,FRANCE
来源：
PHYSICAL REVIEW B | 1985年 / 32卷 / 10期
关键词：
D O I：
10.1103/PhysRevB.32.6688
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：6688 / 6691
页数：4
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