RAMAN-SCATTERING FROM ION-IMPLANTED SILICON

被引：53

作者：

JAIN, KP ^{[1
]}

SHUKLA, AK ^{[1
]}

ASHOKAN, R ^{[1
]}

ABBI, SC ^{[1
]}

BALKANSKI, M ^{[1
]}

机构：

[1] UNIV PARIS 06,PHYS SOLIDES LAB,F-75230 PARIS 05,FRANCE

来源：

PHYSICAL REVIEW B | 1985年 / 32卷 / 10期

关键词：

D O I：

10.1103/PhysRevB.32.6688

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：6688 / 6691

页数：4

共 18 条

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[5]

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[7] IMPLICATION OF AMORPHOUS-LIKE RAMAN-SPECTRA OF GAS-EVAPORATED SI AND GE MICROCRYSTALS [J].

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ABE, H .

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[8]

JAIN KS, UNPUB

[9]

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[10]

MCFARLANE RA, 1980, LASER ELECTRON BEAM

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