ANOMALOUS DISTRIBUTION OF AS DURING IMPLANTATION IN SILICON UNDER SELF-ANNEALING CONDITIONS

被引：9
作者：
LULLI, G
MERLI, PG
RIZZOLI, R
BERTI, M
DRIGO, AV
机构：
[1] UNIV PADUA,GNSM,CISM,DIPARTIMENTO FIS G GALILEI,I-35131 PADUA,ITALY
[2] UNIV LECCE,GNSM,CISM,DIPARTIMENTO SCI MAT,I-73100 LECCE,ITALY
来源：
JOURNAL OF APPLIED PHYSICS | 1989年 / 66卷 / 07期
关键词：
D O I：
10.1063/1.344174
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：2940 / 2946
页数：7
相关论文
共 30 条
[1]   IMPURITY-PEAK FORMATION DURING PROTON-ENHANCED DIFFUSION OF PHOSPHORUS AND BORON IN SILICON [J].
AKUTAGAWA, W ;
DUNLAP, HL ;
HART, R ;
MARSH, OJ .
JOURNAL OF APPLIED PHYSICS, 1979, 50 (02) :777-782
[2]  
Angelucci R., 1988, Solid State Devices. Proceedings of the 17th European Solid State Device Research Conference, ESSDERC '87, P405
[3]   REDISTRIBUTION OF BORON IN SILICON AFTER HIGH-TEMPERATURE PROTON IRRADIATION [J].
BARUCH, P ;
MONNIER, J ;
BLANCHARD, B ;
CASTAING, C .
APPLIED PHYSICS LETTERS, 1975, 26 (03) :77-80
[4]   DOSE-RATE EFFECTS ON THE DYNAMIC ANNEALING MECHANISM IN P+-IMPLANTED SILICON [J].
BERTI, M ;
DRIGO, AV ;
LULLI, G ;
MERLI, PG ;
ANTISARI, MV .
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1986, 97 (01) :77-85
[5]   SELF ANNEALING EFFECTS IN P+ IMPLANTED SILICON [J].
BERTI, M ;
DRIGO, AV ;
GABILLI, E ;
LOTTI, R ;
LULLI, G ;
MERLI, PG ;
ANTISARI, MV .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1987, 19-20 :475-479
[6]  
BERTI M, 1986, PHYS STATUS SOLIDI A, V94, P95, DOI 10.1002/pssa.2210940110
[7]  
BERTI M, 1989, MATER RES SOC S P, V28, P569
[8]   ION-BEAM AND TEMPERATURE ANNEALING DURING HIGH-DOSE IMPLANTS [J].
CANNAVO, S ;
GRIMALDI, MG ;
RIMINI, E ;
FERLA, G ;
GANDOLFI, L .
APPLIED PHYSICS LETTERS, 1985, 47 (02) :138-140
[9]   SELF-ANNEALED ION-IMPLANTED N+-P DIODES [J].
CEMBALI, G ;
FINETTI, M ;
MERLI, PG ;
ZIGNANI, F .
APPLIED PHYSICS LETTERS, 1982, 40 (01) :62-64
[10]   SELF-ANNEALING OF ION-IMPLANTED SILICON - 1ST EXPERIMENTAL RESULTS [J].
CEMBALI, GF ;
MERLI, PG ;
ZIGNANI, F .
APPLIED PHYSICS LETTERS, 1981, 38 (10) :808-810
123