EVALUATION OF DEEP LEVELS IN SEMICONDUCTORS USING FIELD-EFFECT TRANSCONDUCTANCE

被引：11
|
作者：
WADA, O [1 ]
YANAGISAWA, S [1 ]
TAKANASHI, H [1 ]
机构：
[1] FUJITSU LABS LTD,KAMIKODANAKA 1015,NAKAHARA,KAWASAKI,JAPAN
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 1975年 / 14卷 / 01期
关键词：
D O I：
10.1143/JJAP.14.157
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：157 / 158
页数：2
相关论文
共 50 条
  • [41] Carbon-nanotube field-effect transistors with very high intrinsic transconductance
    Nihey, F
    Hongo, H
    Ochiai, Y
    Yudasaka, M
    Iijima, S
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2003, 42 (10B): : L1288 - L1291
  • [42] ON TRANSCONDUCTANCE IN THE P-CHANNEL SI/SIGE HETEROJUNCTION FIELD-EFFECT TRANSISTOR
    KOVACIC, SJ
    OJHA, JJ
    SWOGER, JH
    SIMMONS, JG
    NOEL, JP
    HOUGHTON, DC
    CANADIAN JOURNAL OF PHYSICS, 1992, 70 (10-11) : 963 - 968
  • [43] THE RESONANT-TUNNELING FIELD-EFFECT TRANSISTOR - A NEW NEGATIVE TRANSCONDUCTANCE DEVICE
    SEN, S
    CAPASSO, F
    BELTRAM, F
    CHO, AY
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (08) : 1768 - 1773
  • [44] DISTRIBUTIVE NATURE OF GATE CURRENT AND NEGATIVE TRANSCONDUCTANCE IN HETEROSTRUCTURE FIELD-EFFECT TRANSISTORS
    RUDEN, PP
    SHUR, M
    AKINWANDE, AI
    JENKINS, P
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1989, 36 (02) : 453 - 456
  • [45] A performance evaluation of a novel field-effect device as an alternative to the field-effect diode
    Khorsand, Vahid
    Yousefi, Reza
    Ghoreishi, Seyed Saleh
    Afzalian, Amard
    JOURNAL OF COMPUTATIONAL ELECTRONICS, 2023, 22 (03) : 819 - 826
  • [46] A performance evaluation of a novel field-effect device as an alternative to the field-effect diode
    Vahid Khorsand
    Reza Yousefi
    Seyed Saleh Ghoreishi
    Amard Afzalian
    Journal of Computational Electronics, 2023, 22 : 819 - 826
  • [47] VERTICAL FIELD-EFFECT TRANSISTORS IN III-V SEMICONDUCTORS
    RAVNOY, Z
    LU, LT
    KAPON, E
    MUKAI, S
    MARGALIT, S
    YARIV, A
    APPLIED PHYSICS LETTERS, 1984, 45 (03) : 258 - 260
  • [48] DENSITY OF GAP STATES IN AMORPHOUS-SEMICONDUCTORS BY THE FIELD-EFFECT
    GAZSO, J
    ACTA PHYSICA HUNGARICA, 1984, 56 (1-4) : 209 - 215
  • [49] NONLINEAR PHENOMENA IN HIGH-FREQUENCY FIELD-EFFECT IN SEMICONDUCTORS
    KALASHNIKOV, SG
    FEDOSOV, VI
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1975, 9 (11): : 1405 - 1410
  • [50] MEASUREMENT OF CONDUCTIVITY OF SEMICONDUCTORS IN HIGH-FREQUENCY FIELD-EFFECT
    KALASHNIKOV, SG
    MOROZOV, AI
    FEDOSOV, VI
    ANISIMKIN, VI
    JETP LETTERS, 1975, 21 (06) : 159 - 161
12345