EVALUATION OF DEEP LEVELS IN SEMICONDUCTORS USING FIELD-EFFECT TRANSCONDUCTANCE

被引：11
|
作者：
WADA, O [1 ]
YANAGISAWA, S [1 ]
TAKANASHI, H [1 ]
机构：
[1] FUJITSU LABS LTD,KAMIKODANAKA 1015,NAKAHARA,KAWASAKI,JAPAN
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 1975年 / 14卷 / 01期
关键词：
D O I：
10.1143/JJAP.14.157
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：157 / 158
页数：2
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