EVALUATION OF DEEP LEVELS IN SEMICONDUCTORS USING FIELD-EFFECT TRANSCONDUCTANCE

被引：11

作者：

WADA, O ^{[1
]}

YANAGISAWA, S ^{[1
]}

TAKANASHI, H ^{[1
]}

机构：

[1] FUJITSU LABS LTD,KAMIKODANAKA 1015,NAKAHARA,KAWASAKI,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1975年 / 14卷 / 01期

关键词：

D O I：

10.1143/JJAP.14.157

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：157 / 158

页数：2

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