PROPERTIES OF AMORPHOUS SILICON NITRIDE FILMS

[1] DAVIDSE P, PRIVATE COMMUNICATIO

[2] DOO V, 1965, OCT BUFF M SOC PAP

[3] SOME EFFECTS OF MATERIAL PARAMETERS ON THE DESIGN OF SURFACE SPACE-CHARGE VARACTORS [J]. SOLID-STATE ELECTRONICS, 1961, 2 (01) : 71 - 76

[4] CRYSTAL STRUCTURES OF SILICON NITRIDE [J]. NATURE, 1957, 180 (4581) : 332 - 333

[5] KERR DR, PRIVATE COMMUNICATIO

[6] SEMICONDUCTOR SURFACE VARACTOR [J]. BELL SYSTEM TECHNICAL JOURNAL, 1962, 41 (03): : 803 - +

[7] PENNEBAKER W, PRIVATE COMMUNICATIO

[8] PLISKIN W, PRIVATE COMMUNICATIO

[9] REFRACTIVE INDEX OF SIO2 FILMS GROWN ON SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (06) : 2011 - &

[10] NONDESTRUCTIVE DETERMINATION OF THICKNESS + REFRACTIVE INDEX OF TRANSPARENT FILMS [J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1964, 8 (01) : 43 - &

[1] DAVIDSE P, PRIVATE COMMUNICATIO

[2] DOO V, 1965, OCT BUFF M SOC PAP

[3] SOME EFFECTS OF MATERIAL PARAMETERS ON THE DESIGN OF SURFACE SPACE-CHARGE VARACTORS [J]. SOLID-STATE ELECTRONICS, 1961, 2 (01) : 71 - 76

[4] CRYSTAL STRUCTURES OF SILICON NITRIDE [J]. NATURE, 1957, 180 (4581) : 332 - 333

[5] KERR DR, PRIVATE COMMUNICATIO

[6] SEMICONDUCTOR SURFACE VARACTOR [J]. BELL SYSTEM TECHNICAL JOURNAL, 1962, 41 (03): : 803 - +

[7] PENNEBAKER W, PRIVATE COMMUNICATIO

[8] PLISKIN W, PRIVATE COMMUNICATIO

[9] REFRACTIVE INDEX OF SIO2 FILMS GROWN ON SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (06) : 2011 - &

[10] NONDESTRUCTIVE DETERMINATION OF THICKNESS + REFRACTIVE INDEX OF TRANSPARENT FILMS [J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1964, 8 (01) : 43 - &