HIGH CRITICAL-CURRENT DENSITY NBN/ALN/NBN TUNNEL-JUNCTIONS FABRICATED ON AMBIENT-TEMPERATURE MGO SUBSTRATES

被引：61

作者：

WANG, Z

KAWAKAMI, A

UZAWA, Y

KOMIYAMA, B

机构：

[1] Kansai Advanced Research Center, Communications Research Laboratory, Ministry of Posts and Telecommunications, Nishi-ku, Kobe, 651-24, 588-2 Iwaoka, Iwaoka-cho

来源：

APPLIED PHYSICS LETTERS | 1994年 / 64卷 / 15期

关键词：

D O I：

10.1063/1.111730

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

NbN/AlN/NbN tunnel junctions are fabricated at ambient temperature on MgO substrates, and a critical current density of 8 kA/cm2 is obtained in junctions with 1.5-nm-thick AlN barriers. Even though the NbN/AlN/NbN trilayers are deposited without intentional heating, the junctions show a large gap voltage (V(g)=5 mV), sharp quasiparticle current rise (DELTAV(g)=0.16 mV), and small subgap leakage current (V(m)=25 mV and R(sg)/R(N)=9). This report shows that high-quality NbN/AlN/NbN tunnel junctions can be made at ambient substrate temperature.

引用

页码：2034 / 2036

页数：3

共 16 条

[1] TUNNELING BETWEEN SUPERCONDUCTORS [J].

AMBEGAOKAR, V ;

BARATOFF, A .

PHYSICAL REVIEW LETTERS, 1963, 10 (11) :486-&

[2] ALL NIOBIUM NITRIDE JOSEPHSON JUNCTION WITH HYDROGENATED AMORPHOUS-SILICON BARRIER AND ITS APPLICATION TO THE LOGIC-CIRCUIT [J].

AOYAGI, M ;

SHOJI, A ;

KOSAKA, S ;

SHINOKI, F ;

NAKAGAWA, H ;

TAKADA, S ;

HAYAKAWA, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (12) :L916-L918

[3] PROCESSING OF ALL-NBN TUNNEL JUNCTION SERIES ARRAYS [J].

BLAUGHER, RD ;

PRZYBYSZ, JX ;

TALVACCHIO, J ;

BUTTYAN, J .

IEEE TRANSACTIONS ON MAGNETICS, 1987, 23 (02) :673-675

[4]

MURDUCK JM, 1987, J APPL PHYS, V2, P4216

[5] DIELECTRIC PROPERTIES OF REACTIVELY SPUTTERED FILMS OF ALUMINUM NITRIDE [J].

NOREIKA, AJ ;

FRANCOMBE, MH ;

ZEITMAN, SA .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1969, 6 (01) :194-+

[6] FUNDAMENTAL OPTICAL ABSORPTION IN MAGNESIUM OXIDE [J].

REILING, GH ;

HENSLEY, EB .

PHYSICAL REVIEW, 1958, 112 (04) :1106-1111

[7] FABRICATION OF ALL-NBN JOSEPHSON TUNNEL-JUNCTIONS USING SINGLE-CRYSTAL NBN FILMS FOR THE BASE ELECTRODES [J].

SHOJI, A .

IEEE TRANSACTIONS ON MAGNETICS, 1991, 27 (02) :3184-3187

[8] ALL REFRACTORY JOSEPHSON TUNNEL-JUNCTIONS FABRICATED BY REACTIVE ION ETCHING [J].

SHOJI, A ;

KOSAKA, S ;

SHINOKI, F ;

AOYAGI, M ;

HAYAKAWA, H .

IEEE TRANSACTIONS ON MAGNETICS, 1983, 19 (03) :827-830

[9] NIOBIUM NITRIDE JOSEPHSON TUNNEL-JUNCTIONS WITH MAGNESIUM-OXIDE BARRIERS [J].

SHOJI, A ;

AOYAGI, M ;

KOSAKA, S ;

SHINOKI, F ;

HAYAKAWA, H .

APPLIED PHYSICS LETTERS, 1985, 46 (11) :1098-1100

[10] TEMPERATURE-DEPENDENT PROPERTIES OF NIOBIUM NITRIDE JOSEPHSON TUNNEL-JUNCTIONS [J].

SHOJI, A ;

AOYAGI, M ;

KOSAKA, S ;

SHINOKI, F .

IEEE TRANSACTIONS ON MAGNETICS, 1987, 23 (02) :1464-1471

← 1 2 →