STRAINED INGAAS QUANTUM DISK LASER WITH NANOSCALE ACTIVE-REGION FABRICATED WITH SELF-ORGANIZATION ON GAAS (311)B SUBSTRATE

被引：45

作者：

TEMMYO, J ^{[1
]}

KURAMOCHI, E ^{[1
]}

SUGO, M ^{[1
]}

NISHIYA, T ^{[1
]}

NOTZEL, R ^{[1
]}

TAMAMURA, T ^{[1
]}

机构：

[1] HOKKAIDO UNIV, RCIQE, SAPPORO, HOKKAIDO 060, JAPAN

来源：

ELECTRONICS LETTERS | 1995年 / 31卷 / 03期

关键词：

SEMICONDUCTOR JUNCTION LASERS; SEMICONDUCTOR QUANTUM DOTS; VERTICAL CAVITY SURFACE EMITTING LASERS;

D O I：

10.1049/el:19950140

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Continuous-wave (CW) operation cf a strained InGaAs quantum disk laser with nanoscale active-structures self-organised on GaAs (311)B substrate is demonstrated at room temperature. The threshold current is similar to 20 mA, which is considerably lower than that of double quantum well lasers on GaAs (100) substrate grown side-by-side.

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收藏

页码：209 / 211

页数：3

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