IMPURITY CONCENTRATION AND OPTICAL-ABSORPTION COEFFICIENT CORRELATION AT THE ANALYSIS OF OXYGEN AND CARBON CONTENTS IN SILICON BY THE OPTICAL METHOD

被引：0
作者：
ILIN, MA
KOVARSKI, VJ
ORLOV, AF
机构：
来源：
ANALUSIS | 1986年 / 14卷 / 09期
关键词：
D O I：
暂无
中图分类号：
O65 [分析化学];
学科分类号：
070302 ; 081704 ;
摘要：
引用
收藏
页码：462 / 465
页数：4
相关论文
共 22 条
[1]  
ALEXANDROVA GI, 1979, METROLOGIYA, V9, P56
[2]  
ALEXANDROVA GI, 1982, METROLOGIYA, V7, P53
[3]  
BAKER JA, 1970, SOLID ST ELECTR, V11, P1431
[4]  
DRAPER N, 1966, APPLIED REGRESSION A
[5]   DETERMINATION OF PARTS PER BILLION OXYGEN IN SILICON THROUGH CALIBRATION OF IR-ABSORPTION AT 77 DEGREES KELVIN [J].
GRAFF, K ;
GRALLATH, E ;
ADES, S ;
GOLDBACH, G ;
TOLG, G .
SOLID-STATE ELECTRONICS, 1973, 16 (08) :887-893
[6]  
GRINSHTEIN PM, 1980, METROLOGIYA, V10, P60
[7]  
GROSS C, 1972, J ELECTROCHEM SOC, V7, P926
[8]  
IGLITSYN MI, 1965, SOVIET PHYSICS SOLID, V12, P2508
[9]  
IKESAWA M, 1981, J PHYS SOC JAPAN, V11, P3734
[10]  
ILIN MA, 1984, ZAVODSKAYA LAB, V1, P24
123