IN-SITU CHARACTERIZATION OF A SI SURFACE BY HIGH-SENSITIVITY INFRARED REFLECTION SPECTROSCOPY

Hydrides terminating Si surface atoms have been non-destructively measured in situ in a deposition chamber by high-sensitivity infrared reflection spectroscopy. The absorption peak of the monohydride, Si-H at approximately 2083 cm-1 becomes sharp and clear when Si(111) is immersed in deionized boiling water after the removal of chemical oxide by HF etching. The absorption peaks of Si-H-2 and Si-H-3 on Si(100) are also measured at approximately 2110 and approximately 2140 cm-1, respectively. When the Si(111) wafer is etched by HF and treated in deionized boiling water, it is observed that Si-H is stable against oxygen radicals in 0.1 Torr O2 under D2 lamp irradiation, but is affected by fluorine molecules.