STUDY OF THE ATOMIC MODELS OF 3 DONORLIKE DEFECTS IN SILICON METAL-OXIDE-SEMICONDUCTOR STRUCTURES FROM THEIR GATE MATERIAL AND PROCESS DEPENDENCIES

被引：101

作者：

SAH, CT ^{[1
]}

SUN, JYC ^{[1
]}

TZOU, JJT ^{[1
]}

机构：

[1] UNIV ILLINOIS,DEPT PHYS,URBANA,IL 61801

来源：

关键词：

D O I：

10.1063/1.333411

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1525 / 1545

页数：21

共 65 条

[1] AITKEN JM, 1980, ELECTRICAL MAGNETIC
[2] BALK P, 1965, OCT EL SOC M BUFF
[3] HYDROGEN PASSIVATION OF POINT-DEFECTS IN SILICON
BENTON, JL
DOHERTY, CJ
FERRIS, SD
FLAMM, DL
KIMERLING, LC
LEAMY, HJ
[J]. APPLIED PHYSICS LETTERS, 1980, 36 (08) : 670 - 671
[4] NONVOLATILE SEMICONDUCTOR MEMORY DEVICES
CHANG, JJ
[J]. PROCEEDINGS OF THE IEEE, 1976, 64 (07) : 1039 - 1059
[5] MICROSTRUCTURE FABRICATION IN ELECTRONIC DEVICES
DEAL, BE
CROSSLEY, PA
[J]. ANNUAL REVIEW OF MATERIALS SCIENCE, 1981, 11 : 321 - 351
[6] DiMaria D.J., 1978, PHYS SIO2 ITS INTERF, P160, DOI [10.1016/B978-0-08-023049-8.50034-8, DOI 10.1016/B978-0-08-023049-8.50034-8]
[7] ERNSBERGER FM, 1980, PHYS CHEM GLASSES, V21, P146
[8] THE EFFECTS OF WATER ON OXIDE AND INTERFACE TRAPPED CHARGE GENERATION IN THERMAL SIO2-FILMS
FEIGL, FJ
YOUNG, DR
DIMARIA, DJ
LAI, S
CALISE, J
[J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (09) : 5665 - 5682
[9] POSITIVE CHARGE EFFECTS ON THE FLAT-BAND VOLTAGE SHIFT DURING AVALANCHE INJECTION ON AL-SIO2-SI CAPACITORS
FISCHETTI, MV
GASTALDI, R
MAGGIONI, F
MODELLI, A
[J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (04) : 3129 - 3135
[10] SLOW AND FAST STATES INDUCED BY HOT-ELECTRONS AT SI-SIO2 INTERFACE
FISCHETTI, MV
GASTALDI, R
MAGGIONI, F
MODELLI, A
[J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (04) : 3136 - 3144