STUDY OF THE ATOMIC MODELS OF 3 DONORLIKE DEFECTS IN SILICON METAL-OXIDE-SEMICONDUCTOR STRUCTURES FROM THEIR GATE MATERIAL AND PROCESS DEPENDENCIES

被引：101
作者：
SAH, CT [1 ]
SUN, JYC [1 ]
TZOU, JJT [1 ]
机构：
[1] UNIV ILLINOIS,DEPT PHYS,URBANA,IL 61801
来源：
JOURNAL OF APPLIED PHYSICS | 1984年 / 55卷 / 06期
关键词：
D O I：
10.1063/1.333411
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：1525 / 1545
页数：21
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