CAPTURE CROSS-SECTION AND TRAP CONCENTRATION OF HOLES IN SILICON DIOXIDE

被引：86

作者：

NING, TH ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

JOURNAL OF APPLIED PHYSICS | 1976年 / 47卷 / 03期

关键词：

D O I：

10.1063/1.322729

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1079 / 1081

页数：3

共 16 条

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[3]

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[6] AVALANCHE INJECTION CURRENTS AND CHARGING PHENOMENA IN THERMAL SIO2 [J].

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BERGLUND, CN .

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[7] ELECTRON TRAPPING AT POSITIVELY CHARGED CENTERS IN SIO2 [J].

NING, TH ;

OSBURN, CM ;

YU, HN .

APPLIED PHYSICS LETTERS, 1975, 26 (05) :248-250

[8]

NING TH, 1974, J APPL PHYS, V45, P5373, DOI 10.1063/1.1663246

[9] VACUUM ULTRAVIOLET RADIATION EFFECTS IN SIO2 [J].

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[10]

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