NUMERICAL-SIMULATION OF GAAS GAALAS HETEROJUNCTION BIPOLAR-TRANSISTORS

被引：42

作者：

ASBECK, PM

MILLER, DL

ASATOURIAN, R

KIRKPATRICK, CG

机构：

来源：

ELECTRON DEVICE LETTERS | 1982年 / 3卷 / 12期

关键词：

D O I：

10.1109/EDL.1982.25615

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：403 / 406

页数：4

共 9 条

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[2]

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[3]

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JOURNAL OF APPLIED PHYSICS, 1978, 49 (07) :4064-4068

[5] HETEROSTRUCTURE BIPOLAR-TRANSISTORS AND INTEGRATED-CIRCUITS [J].

KROEMER, H .

PROCEEDINGS OF THE IEEE, 1982, 70 (01) :13-25

[6]

Kroemer H., 1957, RCA REV, V18, P332

[7] ELECTRON DYNAMICS IN SHORT CHANNEL FIELD-EFFECT TRANSISTORS [J].

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[8] LARGE-SIGNAL ANALYSIS OF A SILICON READ DIODE OSCILLATOR [J].

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GUMMEL, HK .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1969, ED16 (01) :64-+

[9]

SZE SM, 1969, PHYSICS SEMICONDUCTO

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