CHEMICAL VAPOR-DEPOSITION AND CHARACTERIZATION OF PHOSPHORUS-NITRIDE (P3N5) GATE INSULATORS FOR INP METAL-INSULATOR-SEMICONDUCTOR DEVICES

被引：49
作者：
HIROTA, Y
KOBAYASHI, T
机构：
来源：
JOURNAL OF APPLIED PHYSICS | 1982年 / 53卷 / 07期
关键词：
D O I：
10.1063/1.331380
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：5037 / 5043
页数：7
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