GROWTH TEMPERATURE-DEPENDENCE OF BORON SURFACE SEGREGATION AND ELECTRICAL-PROPERTIES OF BORON DELTA-DOPED STRUCTURES GROWN BY SI MOLECULAR-BEAM EPITAXY

被引：11

作者：

KUMAGAI, Y ^{[1
]}

MORI, R ^{[1
]}

ISHIMOTO, K ^{[1
]}

PARK, KH ^{[1
]}

HASEGAWA, F ^{[1
]}

机构：

[1] TEXAS INSTRUMENTS TSUKUBA RES & DEV CTR LTD, TSUKUBA, IBARAKI 305, JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1995年 / 34卷 / 9A期

关键词：

SI-MBE; BORON DELTA-DOPED STRUCTURE; RHEED INTENSITY OSCILLATION; SURFACE SEGREGATION; SOLID SOLUBILITY;

D O I：

10.1143/JJAP.34.4593

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Reflection high-energy electron diffraction (RHEED) intensity oscillation showed a 4-monolayer (ML) period in the early stage of Si molecular beam epitaxy (MBE) on a 1 ML boron preadsorbed Si(111) surface, as long as the surface-segregated boron coverage was more than 1/3 ML. Temperature dependence of the boron surface segregation was investigated from the duration of the 4-ML-period oscillation. Effective solubility of boron in Si was one order higher than those reported for 1/3 ML boron preadsorbed cases. Crystallinity of the Si overlayer was satisfactory when the growth temperature was equal to or above 450 degrees C, and 2/3 of the initially adsorbed boron atoms were confined to within about 10 ML (about 16 Angstrom) of the Si overlayer at 450 degrees C. Boron preadsorption was found to saturate at 1 ML, and the temperature dependence of the peak carrier concentration showed the same tendency as that of the effective solubility.

引用

页码：4593 / 4598

页数：6

共 17 条

[11] ATOMIC LAYER DOPED FIELD-EFFECT TRANSISTOR FABRICATED USING SI MOLECULAR-BEAM EPITAXY [J].

NAKAGAWA, K ;

VANGORKUM, AA ;

SHIRAKI, Y .

APPLIED PHYSICS LETTERS, 1989, 54 (19) :1869-1871

[12] MOLECULAR-BEAM EPITAXIAL-GROWTH OF SI ON GA-ACTIVATED SI(111) SURFACE [J].

NAKAHARA, H ;

ICHIKAWA, M .

APPLIED PHYSICS LETTERS, 1992, 61 (13) :1531-1533

[13] ELEMENTAL BORON DOPING BEHAVIOR IN SILICON MOLECULAR-BEAM EPITAXY [J].

PARRY, CP ;

NEWSTEAD, SM ;

BARLOW, RD ;

AUGUSTUS, P ;

KUBIAK, RAA ;

DOWSETT, MG ;

WHALL, TE ;

PARKER, EHC .

APPLIED PHYSICS LETTERS, 1991, 58 (05) :481-483

[14] HIGH-CONCENTRATION EFFECTS OF ION-IMPLANTED BORON IN SILICON [J].

RYSSEL, H ;

MULLER, K ;

HABERGER, K ;

HENKELMANN, R ;

JAHNEL, F .

APPLIED PHYSICS, 1980, 22 (01) :35-38

[15] INTENSITY OSCILLATIONS OF REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION DURING SILICON MOLECULAR-BEAM EPITAXIAL-GROWTH [J].

SAKAMOTO, T ;

KAWAI, NJ ;

NAKAGAWA, T ;

OHTA, K ;

KOJIMA, T .

APPLIED PHYSICS LETTERS, 1985, 47 (06) :617-619

[16] ELECTRICAL CHARACTERIZATION OF AN ULTRAHIGH CONCENTRATION BORON DELTA-DOPING LAYER [J].

WEIR, BE ;

FELDMAN, LC ;

MONROE, D ;

GROSSMANN, HJ ;

HEADRICK, RL ;

HART, TR .

APPLIED PHYSICS LETTERS, 1994, 65 (06) :737-739

[17] BORON DELTA-DOPED SI METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR GROWN BY MOLECULAR-BEAM EPITAXY [J].

WU, SL ;

CARNS, TK ;

WANG, SJ ;

WANG, KL .

APPLIED PHYSICS LETTERS, 1993, 63 (10) :1363-1365

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