MECHANISM OF ION-ASSISTED ETCHING OF SILICON BY FLUORINE-ATOMS

被引：29
|
作者：
YARMOFF, JA [1 ]
MCFEELY, FR [1 ]
机构：
[1] BROOKHAVEN NATL LAB,NATL SYNCHROTRON LIGHT SOURCE,UPTON,NY 11973
来源：
SURFACE SCIENCE | 1987年 / 184卷 / 03期
关键词：
D O I：
10.1016/S0039-6028(87)80365-5
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
引用
收藏
页码：389 / 400
页数：12
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