CRYSTAL, IMPURITY-RELATED AND GROWTH DEFECTS IN MOLECULAR-BEAM EPITAXIAL GAAS-LAYERS

被引：11
|
作者：
BAFLEUR, M
MUNOZYAGUE, A
机构：
来源：
THIN SOLID FILMS | 1983年 / 101卷 / 04期
关键词：
D O I：
10.1016/0040-6090(83)90097-4
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：299 / 310
页数：12
相关论文
共 50 条
  • [1] GROWTH AND CHARACTERIZATION OF MOLECULAR-BEAM EPITAXIAL GAAS-LAYERS ON POROUS SILICON
    LIN, TL
    SADWICK, L
    WANG, KL
    KAO, YC
    HULL, R
    NIEH, CW
    JAMIESON, DN
    LIU, JK
    APPLIED PHYSICS LETTERS, 1987, 51 (11) : 814 - 816
  • [2] SPATIALLY RESOLVED PHOTOLUMINESCENCE AT OVAL DEFECTS IN MOLECULAR-BEAM EPITAXIAL GAAS-LAYERS
    BAFLEUR, M
    MUNOZYAGUE, A
    LAURET, N
    BRABANT, JC
    JOURNAL OF CRYSTAL GROWTH, 1984, 66 (02) : 472 - 474
  • [3] ORIGIN OF OVAL DEFECTS IN GAAS-LAYERS GROWN BY MOLECULAR-BEAM EPITAXY
    AKIMOTO, K
    DOHSEN, M
    ARAI, M
    WATANABE, N
    JOURNAL OF CRYSTAL GROWTH, 1985, 73 (01) : 117 - 122
  • [4] INVESTIGATION OF RIPPLE DEFECTS ON MOLECULAR-BEAM EPITAXY GROWN GAAS-LAYERS
    KADHIM, NJ
    MUKHERJEE, D
    MEHTA, M
    JOURNAL OF MATERIALS SCIENCE LETTERS, 1993, 12 (09) : 623 - 625
  • [5] GAAS MOLECULAR-BEAM EPITAXY ON BE IMPLANTED GAAS-LAYERS
    TAKAMORI, A
    MIYAUCHI, E
    ARIMOTO, H
    BAMBA, Y
    HASHIMOTO, H
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (08): : L520 - L522
  • [6] GROWTH OF HIGH-PURITY GAAS-LAYERS BY MOLECULAR-BEAM EPITAXY
    HWANG, JCM
    TEMKIN, H
    BRENNAN, TM
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (06) : C233 - C233
  • [7] GROWTH OF HIGH-PURITY GAAS-LAYERS BY MOLECULAR-BEAM EPITAXY
    HWANG, JCM
    TEMKIN, H
    BRENNAN, TM
    FRAHM, RE
    APPLIED PHYSICS LETTERS, 1983, 42 (01) : 66 - 68
  • [8] THE ORIGINS AND ELIMINATION OF OVAL DEFECTS IN GAAS-LAYERS GROWN BY MOLECULAR-BEAM EPITAXY
    TAKAHASHI, K
    KAWADA, H
    UEDA, S
    FURUSE, M
    SHIRAYONE, S
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1991, 9 (03): : 854 - 857
  • [9] ELIMINATION OF PAIR DEFECTS FROM GAAS-LAYERS GROWN BY MOLECULAR-BEAM EPITAXY
    CHAI, YG
    PAO, YC
    HIERL, T
    APPLIED PHYSICS LETTERS, 1985, 47 (12) : 1327 - 1329
  • [10] MOLECULAR-BEAM EPITAXIAL-GROWTH OF STRESS-RELEASED GAAS-LAYERS ON SI(001) SUBSTRATES
    OGASAWARA, K
    KONDO, K
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1988, 27 (09): : L1736 - L1738
12345