CRYSTAL, IMPURITY-RELATED AND GROWTH DEFECTS IN MOLECULAR-BEAM EPITAXIAL GAAS-LAYERS

被引:11
作者
BAFLEUR, M
MUNOZYAGUE, A
机构
关键词
D O I
10.1016/0040-6090(83)90097-4
中图分类号
T [工业技术];
学科分类号
08 ;
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页码:299 / 310
页数:12
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