TRIPYRAMIDS AND ASSOCIATED DEFECTS IN EPITAXIAL SILICON LAYERS

被引:21
作者
BOOKER, GR
机构
来源
PHILOSOPHICAL MAGAZINE | 1965年 / 11卷 / 113期
关键词
D O I
10.1080/14786436508223961
中图分类号
T [工业技术];
学科分类号
08 ;
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页码:1007 / &
相关论文
共 25 条
[1]  
BATSFORD KO, 1963, ELECT COMMUN, V38, P354
[2]   GROWTH OF EPITAXIAL SILICON LAYERS BY VACUUM EVAPORATION .2. INITIAL NUCLEATION AND GROWTH [J].
BOOKER, GR ;
UNVALA, BA .
PHILOSOPHICAL MAGAZINE, 1965, 11 (109) :11-&
[3]   CRYSTALLOGRAPHIC IMPERFECTIONS IN EPITAXIALLY GROWN SILICON [J].
BOOKER, GR ;
STICKLER, R .
JOURNAL OF APPLIED PHYSICS, 1962, 33 (11) :3281-&
[4]   METHOD OF PREPARING SI AND GE SPECIMENS FOR EXAMINATION BY TRANSMISSION ELECTRON MICROSCOPY [J].
BOOKER, GR ;
STICKLER, R .
BRITISH JOURNAL OF APPLIED PHYSICS, 1962, 13 (09) :446-&
[5]  
BOOKER GR, IN PRESS
[6]  
BOOKER GR, 1964, GENERAL DISCUSSIONS
[7]  
BOOKER GR, 1964, 3 P EUR REG C EL MIC, P383
[8]   STRUCTURAL IMPERFECTION IN VAPOUR-GROWN SILICON [J].
CHU, TL ;
GAVALER, JR .
PHILOSOPHICAL MAGAZINE, 1964, 9 (102) :993-&
[9]   STACKING FAULTS IN VAPOR GROWN SILICON [J].
CHU, TL ;
GAVALER, JR .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1963, 110 (05) :388-393
[10]   DOUBLE POSITIONING IN SILVER AND GOLD LAYERS DEPOSITED ON MICA [J].
DICKSON, EW ;
PASHLEY, DW .
PHILOSOPHICAL MAGAZINE, 1962, 7 (80) :1315-&