THE ROLE OF HYDROGEN IN HEAVILY DOPED AMORPHOUS-SILICON

被引:27
作者
CARLSON, DE
SMITH, RW
MAGEE, CW
ZANZUCCHI, PJ
机构
来源
PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES | 1982年 / 45卷 / 01期
关键词
D O I
10.1080/13642818208246388
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:51 / 68
页数:18
相关论文
共 46 条
[1]   OPTICAL AND ELECTRICAL PROPERTIES OF BORON-IMPLANTED AMORPHOUS-GERMANIUM THIN-FILMS [J].
ANDERSON, GW ;
DAVEY, JE ;
COMAS, J ;
SAKS, NS ;
LUCKE, WH .
JOURNAL OF APPLIED PHYSICS, 1974, 45 (10) :4528-4533
[2]   THICKNESS AND TEMPERATURE-DEPENDENCE OF THE CONDUCTIVITY OF PHOSPHORUS-DOPED HYDROGENATED AMORPHOUS-SILICON [J].
AST, DG ;
BRODSKY, MH .
PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1980, 41 (03) :273-285
[3]   TUNNELING IN HYDROGENATED AMORPHOUS SILICON [J].
BALBERG, I ;
CARLSON, DE .
PHYSICAL REVIEW LETTERS, 1979, 43 (01) :58-61
[4]  
BRODSKY MH, 1977, PHYS REV B, V16, P3556, DOI 10.1103/PhysRevB.16.3556
[5]   ELECTRON SPIN RESONANCE IN AMORPHOUS SILICON, GERMANIUM, AND SILICON CARBIDE [J].
BRODSKY, MH ;
TITLE, RS .
PHYSICAL REVIEW LETTERS, 1969, 23 (11) :581-&
[6]   QUANTITATIVE-ANALYSIS OF HYDROGEN IN GLOW-DISCHARGE AMORPHOUS SILICON [J].
BRODSKY, MH ;
FRISCH, MA ;
ZIEGLER, JF ;
LANFORD, WA .
APPLIED PHYSICS LETTERS, 1977, 30 (11) :561-563
[7]   EFFECT OF HYDROGEN CONTENT ON THE PHOTO-VOLTAIC PROPERTIES OF AMORPHOUS SILICON [J].
CARLSON, DE ;
MAGEE, CW ;
TRIANO, AR .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (04) :688-691
[8]   AMORPHOUS SILICON SOLAR-CELL [J].
CARLSON, DE ;
WRONSKI, CR .
APPLIED PHYSICS LETTERS, 1976, 28 (11) :671-673
[9]   AMORPHOUS SILICON SOLAR-CELLS [J].
CARLSON, DE .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (04) :449-453
[10]   AMORPHOUS-SILICON [J].
CARLSON, DE .
PROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION OF MATERIALS, 1981, 4 (03) :173-193