GROWTH-PATTERN OF SILICON CLUSTERS

被引：10

作者：

BAHEL, A ^{[1
]}

PAN, J ^{[1
]}

RAMAKRISHNA, MV ^{[1
]}

机构：

[1] NYU,DEPT PHYS,NEW YORK,NY 10003

来源：

MODERN PHYSICS LETTERS B | 1995年 / 9卷 / 13期

关键词：

D O I：

10.1142/S0217984995000759

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Tight-binding molecular dynamics simulated annealing technique is employed to search for the ground state geometries of silicon clusters containing 11-17 atoms. These studies revealed that layer formation is the dominant growth pattern in all these clusters. Fullerene-like precursor structures consisting of fused pentagon rings are also observed. The atoms in ail these clusters exhibit pronounced preference for residing on the surface.

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页码：811 / 816

页数：6

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