INHOMOGENEOUS STRAIN FIELD SCATTERING DEFORMATION POTENTIAL .1. THEORY

被引：10

作者：

FARVACQUE, JL ^{[1
]}

LENGLART, P ^{[1
]}

机构：

[1] UNIV SCI & TECH LILLE,CNRS,STRUCT & PROPRIETES ETAT SOLIDE LAB 234,F-59650 VILLENEUVE ASCQ,FRANCE

来源：

PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 1977年 / 80卷 / 01期

关键词：

D O I：

10.1002/pssb.2220800142

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：361 / 367

页数：7

共 13 条

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GERLACH, E .

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[8] NEW METHOD FOR CALCULATING IONIZED IMPURITY SCATTERING IN SEMICONDUCTORS [J].

GERLACH, E .

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[9] SCATTERING OF ELECTRONS IN SEMICONDUCTORS BY A CHARGED DISLOCATION [J].

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[10]

HEINE V, 1970, SOLID STATE PHYS, V24, P20

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