WSE2 THIN-FILMS PREPARED BY SOFT SELENIZATION

被引:46
作者
JAGERWALDAU, A
BUCHER, E
机构
[1] Universität Konstanz, Fakultät für Physik, 7750 Konstanz
关键词
D O I
10.1016/0040-6090(91)90038-Y
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Thin films of WSe2 were prepared by soft selenization of r.f.-sputtered tungsten films in a closed tube system. Two types of orientations could be obtained depending on the selenium partial pressure. The basal plane of the crystallites was oriented either predominantly parallel or predominantly perpendicular to the substrate surface. With X-ray energy spectrometry and X-ray diffraction the stoichiometry and single phase of the WSe2 films were demonstrated. From the X-ray diffraction spectra the average grain size was calculated to be between 10 and 35 nm. The indirect band gap was found to lie between 1.20 and 1.30 eV and the direct gap was found between 1.40 and 1.50 eV.
引用
收藏
页码:157 / 164
页数:8
相关论文
共 26 条
  • [11] UBER WOLFRAMSULFIDE UND WOLFRAMSELENIDE
    GLEMSER, O
    SAUER, H
    KONIG, P
    [J]. ZEITSCHRIFT FUR ANORGANISCHE CHEMIE, 1948, 257 (5-6): : 241 - 246
  • [12] COMPOSITION AND MORPHOLOGY OF MOSE2 THIN-FILMS
    JAGERWALDAU, A
    LUXSTEINER, M
    JAGERWALDAU, R
    BURKHARDT, R
    BUCHER, E
    [J]. THIN SOLID FILMS, 1990, 189 (02) : 339 - 345
  • [13] JAGERWALDAU A, 1990, 5TH P INT PVSEC KYOT
  • [14] KAM KK, 1982, J PHYS CHEM-US, V86, P463, DOI 10.1021/j100393a010
  • [15] KAM KK, 1982, THESIS IOWA STATE U
  • [16] THE ROLE OF CARRIER DIFFUSION AND INDIRECT OPTICAL-TRANSITIONS IN THE PHOTOELECTROCHEMICAL BEHAVIOR OF LAYER TYPE D-BAND SEMICONDUCTORS
    KAUTEK, W
    GERISCHER, H
    TRIBUTSCH, H
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (11) : 2471 - 2478
  • [17] KAUTEK W, 1977, BER BUNSEN PHYS CHEM, V84, P645
  • [18] KIMMEL M, 1988, KONSTANZER DISSERTAT, V197
  • [19] LUXSTEINER M, 1987, 3 INT PHOT SCI ENG C, P687
  • [20] MILLER DE, SERI9050 LAWR LIV LA