共 13 条
- [1] MODULATION-SPECTROSCOPY STUDY OF THE GA1-XALXSB BAND-STRUCTURE [J]. PHYSICAL REVIEW B, 1983, 27 (08): : 4946 - 4954
- [2] ARMANTROUT GA, 1979, UNPUB PHOTOVOLTAIC S, P960
- [3] ELECTRICAL CHARACTERISTICS OF GAAS MIS SCHOTTKY DIODES [J]. SOLID-STATE ELECTRONICS, 1979, 22 (07) : 621 - 631
- [5] ELECTRICAL-PROPERTIES OF INP MIS DEVICES [J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1983, 16 (06) : 1099 - 1107
- [8] FERMI LEVEL POSITION AT METAL-SEMICONDUCTOR INTERFACES [J]. PHYSICAL REVIEW, 1964, 134 (3A): : A713 - +
- [10] FERMI LEVEL POSITION AT SEMICONDUCTOR SURFACES [J]. PHYSICAL REVIEW LETTERS, 1963, 10 (11) : 471 - &