OPTICAL-PROPERTIES OF THE IMPURITY INTERVALLEY MULTIPLET IN GE-TYPE SEMICONDUCTORS IN UNIFORM CONSTANT ELECTRIC-FIELD

被引：2
作者：
SAVVINIKH, SK
机构：
[1] Acad of Sciences of the USSR, Inst, of Semiconductor Physics,, Novosibirsk, USSR, Acad of Sciences of the USSR, Inst of Semiconductor Physics, Novosibirsk, USSR
来源：
PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 1985年 / 129卷 / 01期
关键词：
D O I：
10.1002/pssb.2221290139
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
4
引用
收藏
页码：387 / 391
页数：5
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[3]  
SAVVINIKH SK, 1980, FIZ TVERD TELA, V23, P3717
[4]  
SAVVINYKH SK, 1979, FIZ TVERD TELA+, V21, P1673
[5]   COMPENSATION-INDUCED OPTICAL-TRANSITIONS WITHIN THE GROUND-STATE OF SHALLOW DONORS IN GE AND SI [J].
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