LATTICE-DYNAMICS AND PHONON-DISPERSION IN THE NARROW GAP SEMICONDUCTOR BI2TE3 WITH SANDWICH STRUCTURE

被引：43
作者：
KULLMANN, W
EICHHORN, G
RAUH, H
GEICK, R
ECKOLD, G
STEIGENBERGER, U
机构：
[1] UNIV WURZBURG,INST PHYS,W-8700 WURZBURG,GERMANY
[2] FORSCHUNGSZENTRUM JULICH,INST FESTKORPERFORSCH,KARLSRUHE,GERMANY
[3] INST MAX VON LAUE PAUL LANGEVIN,F-38042 GRENOBLE,FRANCE
[4] RHEIN WESTFAL TH AACHEN,INST KRISTALLOG,W-5100 AACHEN,GERMANY
来源：
PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 1990年 / 162卷 / 01期
关键词：
D O I：
10.1002/pssb.2221620109
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The extremely anisotropic bonding properties of the narrow gap semiconductor bismuth telluride (Bi2Te3) with sandwich structure is studied by inelastic neutron scattering. In combination with lattice dynamical shell model calculations, new information is obtained on the complex bonding forces of this sandwich structured V-VI semiconductor. The sanswich character leads predominantely to three-dimensional bonding behavior. No characteristic two-dimensional lattice properties can be observed.
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收藏
页码：125 / 140
页数：16
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