INSTABILITIES IN 6H-SIC MOS STRUCTURES

被引：2

作者：

RAYNAUD, C ^{[1
]}

AUTRQAN, JL ^{[1
]}

SEIGNEUR, F ^{[1
]}

JAUSSAUD, C ^{[1
]}

BILLON, T ^{[1
]}

GUILLOT, G ^{[1
]}

BALLAND, B ^{[1
]}

机构：

[1] CEA,DTA,LETI,F-38041 GRENOBLE,FRANCE

来源：

JOURNAL DE PHYSIQUE III | 1994年 / 4卷 / 05期

关键词：

D O I：

10.1051/jp3:1994176

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this paper, we present a study of some instabilities observed on p-type 6H-SiC MOS structures by different measurement techniques of capacitance, charge and current, as well as by Thermally Stimulated Ionic Current (TSIC). The analysis of hysteresis and deformation of C-V curves show the presence of interface states and oxide traps, with a density of about 5 to 7 x 10(10) eV-1.cm 2 at midgap and a peak of 3 x 10(12) eV-1.cm-2 at E = E(v) + 0.53 eV. TSIC spectra show the presence of mobile charges in a concentration range of 10(12) cm-2. The behaviour of the inversion layer is also studied at different temperatures. We show that the minority carrier generation is assisted by deep levels (generation centers).

引用

页码：937 / 952

页数：16

共 31 条

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