CALCULATION OF CRITICAL LAYER THICKNESS VERSUS LATTICE MISMATCH FOR GEXSI1-X/SI STRAINED-LAYER HETEROSTRUCTURES

被引:1468
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PEOPLE, R
BEAN, JC
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10.1063/1.96206
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O59 [应用物理学];
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页码:322 / 324
页数:3
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共 9 条
[1]  
Ball C., 1983, DISLOCATIONS SOLIDS, P123
[2]   GEXSI1-X/SI STRAINED-LAYER SUPERLATTICE GROWN BY MOLECULAR-BEAM EPITAXY [J].
BEAN, JC ;
FELDMAN, LC ;
FIORY, AT ;
NAKAHARA, S ;
ROBINSON, IK .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1984, 2 (02) :436-440
[3]  
HULL R, 1984, 13TH P INT C DEF SEM, P505
[4]   USE OF MISFIT STRAIN TO REMOVE DISLOCATIONS FROM EPITAXIAL THIN-FILMS [J].
MATTHEWS, JW ;
BLAKESLEE, AE ;
MADER, S .
THIN SOLID FILMS, 1976, 33 (02) :253-266
[5]   ACCOMMODATION OF MISFIT ACROSS INTERFACE TEBWEEN CRYSTALS OF SEMICONDUCTING ELEMENTS OR COMPOUNDS [J].
MATTHEWS, JW ;
MADER, S ;
LIGHT, TB .
JOURNAL OF APPLIED PHYSICS, 1970, 41 (09) :3800-&
[6]   DEFECTS ASSOCIATED WITH ACCOMMODATION OF MISFIT BETWEEN CRYSTALS [J].
MATTHEWS, JW .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1975, 12 (01) :126-133
[7]  
MATTHEWS JW, 1974, J CRYST GROWTH, V27, P118, DOI 10.1016/S0022-0248(74)80055-2
[8]  
Nabarro F.R.N., 1967, THEORY CRYSTAL DISLO, P75
[9]   CRYSTAL INTERFACES .2. FINITE OVERGROWTHS [J].
VANDERMERWE, JH .
JOURNAL OF APPLIED PHYSICS, 1963, 34 (01) :123-&