MODIFICATION OF EINSTEIN RELATION FOR SEMICONDUCTOR INVERSION LAYERS

被引：10

作者：

CHOUDHURY, DR ^{[1
]}

BASU, PK ^{[1
]}

CHAKRAVARTI, AN ^{[1
]}

机构：

[1] UNIV COLL SCI & TECHNOL,INST RADIO PHYS & ELECTR,CALUTTA 700009,INDIA

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1976年 / 38卷 / 01期

关键词：

D O I：

10.1002/pssa.2210380168

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：K85 / K88

页数：4

共 10 条

[1]

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[2] GENERALIZED EINSTEIN RELATION FOR DEGENERATE SEMICONDUCTORS HAVING NON-PARABOLIC ENERGY-BANDS [J].

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NAG, BR .

INTERNATIONAL JOURNAL OF ELECTRONICS, 1974, 37 (02) :281-284

[3] MOBILITY ANISOTROPY AND PIEZORESISTANCE IN SILICON P-TYPE INVERSION LAYERS [J].

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[4]

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[6] GENERALIZED EINSTEIN RELATION FOR DEGENERATE SEMICONDUCTORS [J].

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AYERS, RW .

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[7] EXPERIMENTAL VERIFICATION OF SURFACE QUANTIZATION OF AN N-TYPE INVERSION LAYER OF SILICON AT 300 AND 77 DEGREES K [J].

PALS, JA .

PHYSICAL REVIEW B, 1972, 5 (10) :4208-&

[8] MEASUREMENTS OF SURFACE QUANTIZATION IN SILICON N-TYPE AND P-TYPE INVERSION LAYERS AT TEMPERATURES ABOVE 25 K [J].

PALS, JA .

PHYSICAL REVIEW B, 1973, 7 (02) :754-760

[9] PROPERTIES OF SEMICONDUCTOR SURFACE INVERSION LAYERS IN ELECTRIC QUANTUM LIMIT [J].

STERN, F ;

HOWARD, WE .

PHYSICAL REVIEW, 1967, 163 (03) :816-&

[10]

Stern F., 1974, Critical Reviews in Solid State Sciences, V4, P499

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