LOW-FREQUENCY NOISE IN GAAS CURRENT LIMITERS

被引：12

作者：

PECZALSKI, A ^{[1
]}

VANDERZIEL, A ^{[1
]}

ZULEEG, R ^{[1
]}

机构：

[1] MCDONNELL DOUGLAS ASTRONAUT CO,HUNTINGTON BEACH,CA 92647

来源：

SOLID-STATE ELECTRONICS | 1983年 / 26卷 / 09期

关键词：

D O I：

10.1016/0038-1101(83)90056-4

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：861 / 872

页数：12

共 11 条

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[2] LOW-FREQUENCY NOISE IN GAAS SCHOTTKY-GATE FETS [J].

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CAIMINADE, J .

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[3] LOW-FREQUENCY NOISE SPECTRUM OF GAAS-FETS [J].

GRAFFEUIL, J .

ELECTRONICS LETTERS, 1981, 17 (11) :387-388

[4] DEEP TRAPPING EFFECTS AT GAAS-GAAS-CR INTERFACE IN GAAS FET STRUCTURES [J].

HOUNG, YM ;

PEARSON, GL .

JOURNAL OF APPLIED PHYSICS, 1978, 49 (06) :3348-3352

[5]

HSIEH KC, 1974, THESIS U FLORIDA GAI

[6]

LIU SG, 1980, RCA REV, V41, P227

[7]

MATARE HF, 1971, DEFECT ELECTRONICS S

[8] ANALYSIS OF ELECTRICAL AND OPTICAL-PROPERTIES OF INSULATING FILM-GAAS INTERFACES USING MESFET-TYPE STRUCTURES [J].

OZEKI, M ;

KODAMA, K ;

TAKIKAWA, M ;

SHIBATOMI, A .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 21 (02) :438-441

[9]

OZEKI M, 1981, I PHYS C SER, V63, P323

[10]

PARRILLO LC, 1979, IEEE T ELECTRON DEV, P348

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