MOS DEVICE APPLICATION OF FOCUSED ION-BEAM DOPING

被引：0
作者：
WADA, Y [1 ]
SHUKURI, S [1 ]
TAMURA, M [1 ]
ISHITANI, T [1 ]
MASUDA, H [1 ]
机构：
[1] HITACHI LTD,CENT RES LAB,KOKUBUNJI,TOKYO 185,JAPAN
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1985年 / 132卷 / 08期
关键词：
D O I：
暂无
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
引用
收藏
页码：C357 / C357
页数：1
相关论文
共 50 条
[21]   FOCUSED ION-BEAM INDUCED DEPOSITION [J].
MELNGAILIS, J ;
BLAUNER, PG .
ION BEAM PROCESSING OF ADVANCED ELECTRONIC MATERIALS, 1989, 147 :127-141
[22]   MICROMACHINING USING A FOCUSED ION-BEAM [J].
YOUNG, RJ .
VACUUM, 1993, 44 (3-4) :353-356
[23]   FOCUSED ION-BEAM LITHOGRAPHY AND IMPLANTATION [J].
MELNGAILIS, J .
EIGHTH BIENNIAL UNIVERSITY/GOVERNMENT/INDUSTRY MICROELECTRONICS SYMPOSIUM, 1989, :70-75
[24]   FOCUSED ION-BEAM TECHNOLOGY FOR OPTOELECTRONICS [J].
GAMO, K .
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1991, 9 (1-3) :307-314
[25]   DEVELOPMENT OF FOCUSED ION-BEAM SYSTEMS [J].
AIHARA, R ;
SAWARAGI, H ;
THOMPSON, B ;
SHEARER, MH .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1989, 37-8 :212-217
[26]   FOCUSED ION-BEAM MICROSURGERY FOR ELECTRONICS [J].
MUSIL, CR ;
BARTELT, JL ;
MELNGAILIS, J .
IEEE ELECTRON DEVICE LETTERS, 1986, 7 (05) :285-287
[27]   FOCUSED ION-BEAM ETCHING OF NITROCELLULOSE [J].
YASUOKA, Y ;
HARAKAWA, K ;
GAMO, K ;
NAMBA, S .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (01) :405-408
[28]   MULTICHANNEL ION-BEAM DEVICE [J].
ILYUSHKIN, VA ;
NOSKOV, DA ;
SHANGIN, AS ;
SHIBAEV, YA .
INSTRUMENTS AND EXPERIMENTAL TECHNIQUES, 1977, 20 (03) :811-813
[29]   A NOVEL EPROM DEVICE FABRICATED USING FOCUSED BORON ION-BEAM IMPLANTATION [J].
SHUKURI, S ;
WADA, Y ;
HAGIWARA, T ;
KOMORI, K ;
TAMURA, M .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (06) :1264-1270
[30]   MERGING FOCUSED ION-BEAM PATTERNING AND OPTICAL LITHOGRAPHY IN DEVICE AND CIRCUIT FABRICATION [J].
MURGUIA, JE ;
MUSIL, CR ;
SHEPARD, MI ;
LEZEC, H ;
ANTONIADIS, DA ;
MELNGAILIS, J .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1990, 8 (06) :1374-1379
12345