MOS DEVICE APPLICATION OF FOCUSED ION-BEAM DOPING

被引：0
作者：
WADA, Y [1 ]
SHUKURI, S [1 ]
TAMURA, M [1 ]
ISHITANI, T [1 ]
MASUDA, H [1 ]
机构：
[1] HITACHI LTD,CENT RES LAB,KOKUBUNJI,TOKYO 185,JAPAN
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1985年 / 132卷 / 08期
关键词：
D O I：
暂无
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
引用
收藏
页码：C357 / C357
页数：1
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