共 50 条
- [1] TEMPERATURE-INDUCED INTRABAND TRANSITIONS IN THE N-TYPE HGTE/CDTE SUPERLATTICE - COMMENT PHYSICAL REVIEW B, 1991, 43 (18): : 14715 - 14717
- [2] EFFECTIVE MASS IN AN N-TYPE HGTE-CDTE SUPERLATTICE PHYSICAL REVIEW B, 1987, 36 (17): : 9290 - 9292
- [3] INTRABAND TRANSITIONS IN N-TYPE ALSB SOVIET PHYSICS SEMICONDUCTORS-USSR, 1973, 6 (10): : 1752 - 1753
- [4] Correlation Between Bands Structure and Magneto-Transport Properties in n-type HgTe/CdTe Superlattice with Relatively Thin CdTe Barrier 15TH INTERNATIONAL CONFERENCE ON NARROW GAP SYSTEMS (NGS15), 2011, 1416 : 68 - 71
- [5] Temperature-induced phase transitions of the ordered superlattice assembly of Au nanoclusters JOURNAL OF PHYSICAL CHEMISTRY B, 2005, 109 (07): : 2552 - 2558
- [6] SUMMARY ABSTRACT - HGTE-CDTE A TYPE-III SUPERLATTICE JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1986, 4 (04): : 2114 - 2116
- [7] GALVANOTHERMOMAGNETIC EFFECTS IN N-TYPE HGTE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1969, 3 (02): : 271 - &
- [10] INTRABAND PHOTOCONDUCTIVITY OF COMPENSATED N-TYPE INSB SOVIET PHYSICS SEMICONDUCTORS-USSR, 1975, 9 (08): : 972 - 976